【摘要】 对SEU数据—特别是看似不理想,但却包含了丰富的物理信息的所谓“坏数据”—的处理方法进行了分析讨论,并具体针对IDT7164器件的SEU数据进行了处理,从中得到了死层厚度、灵敏体积厚度、能量阈值等进行单粒子翻转预测所需要的关键参数,并就如何根据国内加速器的实际情况开展有针对性的单粒子效应模拟试验提出了一些初步想法.更多还原

【Abstract】 Recently we carried out SEU measurements of some devices in a heavy ion accelerator. Because the ions with higher LET values don’t have larger ranges in Silicon, when they are used to probe a device with thick die layer, they are either not able to reach the sensitive volume, or deposit very limited energy in the sensitive volume even though they reach there, as a result, the measured σ-LET curve greatly deviates from weibull function. These kinds of data are usually regarded as unsatisfactory and discarded. In fact, these data may contain very important physical information, and if processed properly, can provide some key parameters about the sensitive volume. To introduce the suggested data processing method, the SEU data for IDT7164 is processed as an example, from which such key parameters as the die layer thickness, the sensitive volume thickness, as well as the threshold of deposited energy for upset are extracted, which are well in agreement with abroad measured results. These parameters are not only very important for SEU sensitivity evaluation of onboard devices, but also difficult to acquire through other experimental methods.Finally, based on the introduced method, some preliminary thoughts are put forward about how to use combination of ions with large and short ranges to probe the key parameters about sensitive volume of a device. Furthermore, how to select proper combination of ions according to the characteristics of different domestic accelerators is discussed.更多还原