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脉冲磁过滤阴极弧沉积中基片台悬浮电位研究

SUBSTRATE FLOATING POTENTIAL STUDY IN FILTEREDPULSED CATHODE ARC DEPOSITION SYSTEM

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【作者】 邹学平李国卿丁振峰张家良牟宗信关秉羽

【Author】 ZOU Xueping1, LI Guoqing1, DING Zhenfeng1, ZHANG Jialiang1, MU Zongxin1, GUAN Bingyu2Modification by Laser,Electron and Ion Beams Dalian University of Technology,Dalian 116024; 2.Shenyang Beiyu Vacuum Machine Company,Shenyang 110000)

【机构】 大连理工大学三束材料改性国家重点实验室沈阳北宇真空机械厂 大连116024大连116024沈阳110000

【摘要】 通过测量脉冲磁过滤阴极弧等离子体沉积系统中的基片台悬浮电位,发现了弧源接地方式对基片台悬浮电位与等离子体电位影响很大。当阳极接地时基片台悬浮电位可达-60V,而弧源悬浮时却只有-5V。因此,要获得相似沉积条件的沉积薄膜,弧源接地方式不同,给基片施加偏压也应有所不同。

【Abstract】 From the experimental results of plasma potential and substrate floating potential of pulsed filtered cathode arc deposition system,the change of grounded state of the arc source influences greatly the substrate floating potential and plasma potential.Under typical discharge condition,the substrate floating potential is -5V as the arc source is floated to the ground,but drops to -60V in the case of the anode being grounded.As a result,in order to obtain similar deposition condition,different bias must be applied to the substrate when the grounding of the arc source is different.

  • 【文献出处】 核聚变与等离子体物理 ,Nuclear Fusion and Plasma Physics , 编辑部邮箱 ,2002年04期
  • 【分类号】O531
  • 【被引频次】1
  • 【下载频次】71
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