【摘要】 用磁控溅射和离子束溅射共沉积的方法,分别以TiN、TaN、ZrN为扩散阻挡层,在单晶硅片上制备了Cu-Zr合金膜,膜在400oC氮气中退火1h。研究表明,不同扩散阻挡层上Cu-Zr膜的形貌不同,沉积态膜的组成颗粒以ZrN为扩散阻挡层的最小,退火后膜的颗粒长大,且Zr向膜表面和界面处扩散。沉积态的膜具有强的(111)取向,峰形宽化明显,退火后又出现(200)、(220)、(311)衍射峰,扩散阻挡层不同时Cu-Zr合金膜的(200)与(111)的强度比值不同。更多还原

【Abstract】 Cu -Zr alloy films were deposited on TiN,TaN and ZrN diffusion barriers with co -sputtering technology that combined magnetron sputtering(MS )and ion beam sputtering(IBS).The films were annealed at 400 o C for 1h in N 2 .It is found that after annealing,Zr in the film diffuses to the surface and the interface,and the surface morphology and particle size vary with different diffusion barriers.The f ilms on ZrN diffusion barrier has the smallest particle size.The as -deposited Cu -Zr alloy films have a strong(111)texture and broaden peaks.After annealing,the Cu -Zr alloy films become less oriented.There appear(200),(220)and(311)peaks,besides(111)peak and the integrated intensity ra tio of(200)/(111)is different for different film /barrier system.更多还原