【摘要】 报道了采用不同的电介质薄膜 Si O2 、Si Ox Ny、Si3N4 和 Si Ox Py Nz 及其组合用于 In Ga As P/In P多量子阱材料的包封源 .在高纯氮气保护下经 85 0℃、7s的快速退火处理 ,结果发现 :含磷组分 Si Ox Py Nz 电介质薄膜包封下的 In-Ga As P/In P量子阱带隙展宽十分显著 ,高达 2 2 4 me V ,PL谱峰值波长蓝移 342 nm ,半宽较窄仅为 2 5 nm ,说明量子阱性能保持十分良好 ,并对此现象的成因做了初步分析更多还原

【Abstract】 Quantum well intermixing (QWI) of InGaAsP/InP MQWs is investigated through capping SiO 2,SiO x N y ,Si 3N 4 and SiO x P y N z thin film by PECVD and consequently rapid thermal annealing.The dielectric layers are grown on InGaAsP/InP MQWs materials with the thickness of 300nm.The samples are annealed at 850℃ for 7s under high purity nitrogen protection.The results show that the band gap blue shift is up to 224meV(342nm) for SiO x P y N z capped layer evidently.Furthermore,it has excellent characteristic after QWI.This unusual phenomenon is discussed.更多还原