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VO2薄膜及电学开关特性

Vanadium Dioxide Films with Electrical Switching Property

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【作者】 许旻邱家稳赵印中王洁冰何延春李强勇

【Author】 Xu Min,Qiu Jiawen,Zhao Yinzhong,Wang Jiebing,He Yanchun,Li Qiangyong(Lanzhou Institute of Physics,Lanzhou,730000)

【机构】 兰州物理所兰州物理所 兰州730000兰州730000兰州730000

【摘要】 用溶胶 凝胶法在非晶玻璃上制备VO2 薄膜 ,经过熔融、涂膜、烘干和热处理等工艺最后得到电阻相变 2~ 3个量级的VO2 薄膜。对烘干温度、熔融温度、膜厚和热处理温度对薄膜电阻开关特性的影响进行了研究。通过AFM ,XRD和XPS对薄膜的结构和特性进行分析。

【Abstract】 High quality vanadium dioxide thin films were grown on glass substrates by Sol-Gel processes.The films exhibit 2~3 order of magnitude abrupt variations of resistivity in a temperature range of around 60~80 ℃.The films were studied with atomic force microscopy.X-ray diffraction and X-ray photoelectron spectroscopy.The four procedures of the processes,including quenching,coating,drying and vacuum annealing,were also studied to understand their specific influence on the resistive switching characteristics of the films.

【关键词】 薄膜电阻开关特性制备
【Key words】 Thin filmResistivitySwitching propertiesPreparation
  • 【文献出处】 真空科学与技术 , 编辑部邮箱 ,2001年06期
  • 【分类号】TN304.055
  • 【被引频次】28
  • 【下载频次】138
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