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离子能量和沉积温度对离子束沉积碳膜表面形貌的影响

INFLUENCE OF ION ENERGY AND DEPOSITION TEMPERATURE ON THE SURFACE MORPHOLOGY OF CARBON FILMS DEPOSITED BY ION BEAMS

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【作者】 廖梅勇秦复光柴春林刘志凯杨少延姚振钰王占国

【Author】 LIAO MEI-YONG\ QIN FU-GUANG\ CHAI CHUN-LIN\ LIU ZHI-KAI\ YANG SHAO-YAN\ YAO ZHEN-YU\ WANG ZHAN-GUO (Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing\ 100083,China)

【机构】 中国科学院半导体研究所半导体材料科学实验室!北京100083中国科学院半导体研究所半导体材料科学实?

【摘要】 利用质量分离的低能离子束沉积技术 ,得到了非晶碳膜 .所用离子能量为 5 0— 2 0 0eV ,衬底温度从室温到80 0℃ .在沉积的能量范围内 ,衬底为室温时薄膜为类金刚石 ,表面非常光滑 ;而 6 0 0℃下薄膜主要是石墨成分 ,表面粗糙 .沉积能量大于 140eV ,80 0℃时薄膜表面分立着高度取向的、垂直衬底表面、相互平行的开口碳管 .用高分辨电子显微镜看到了石墨平面的垂直择优取向 ,离子的浅注入和应力是这种优先取向的主要机理 .

【Abstract】 Carbon films were deposited by mass-selected ion beam technique with ion energies 50—200eV at a substrate temperature from room temperature to 800℃. For the energies used, smooth diamond-like carbon films were deposited at room temperature. When the substrate temperature was 600℃,rough graphitic films were produced. But highly oriented carbon tubes were observed when the energies were larger than 140eV at 800℃. They were perpendicular to the surface and parallel to each other. Preferred orientation of graphite basic plane was observed by high-resolution electron microscopy. Shallow ion implantation and stress are responsible for this orientation.

  • 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2001年07期
  • 【分类号】O485
  • 【被引频次】5
  • 【下载频次】146
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