【摘要】 研究了氮化钼膜电极的浸渍－煅烧法制备工艺条件及其电化学行为．试验结果表明，浸渍－煅烧法制备高活性氮化钼电极适宜的浸渍干燥温度为５１３～４７３Ｋ，煅烧升温速率为１Ｋ·ｍｉｎ－１，煅烧温度为９９０Ｋ，煅烧时间为２ｈ；冷却方式为在氨气保护下随炉降温；浸渍－煅烧法制备的氮化钼电极成膜均匀，与基体附着性强；在－０．２２～０．３６Ｖ（ｖｓ ＳＣＥ）电位范围内，循环伏安图基本上呈现矩形，当扫描速度ｓ≤１００ｍＶ·ｓ－１时，电流密度与电势扫描速度成正比，电极电容特征显著，动力学可逆性好，稳定性与重现性好．更多还原

【Abstract】 The technical conditions of preparation of molybdenum nitride film clectrode by dip- calcination method and the electrochemical behaviors of the electrode were studied. The results show that the optimum technical conditions to prepare the electrode are as follows: the dipping drying temperature is 513～473K, the heating rate for calcinator is 1K·min-1, the calcination time at 990K is 2h, and then the reaction system cools down along with the furnace which is protected by ammonia gas. The formed film electrode is of uniformity and has good adhesiveness with Ti substrate. The curve of cyclic voltammotry of the film electrode shows basically rectangle. The film electrode of molybdenum nitride exhibits a characteristic of capacitor and the reversibility of the kinetics, and shows remarkable stability and reproducibility of discharge/recharge behavior. The potential range of reversible capacitative behavior is -0.22～0.36V (vs SCE). When the sweep- rate of potential is less than or equals 100mV·s-1, the response current density increases with the sweep-rate.更多还原