【摘要】 用光荧光谱 ( PL)方法研究了无杂质空位诱导 ( IFVD) In Ga As/In P多量子阱 ( MQWs)结构的带隙蓝移 .实验中选用 Si3 N4 作为电介质层 ,用以产生空位 ,并经快速热退火处理 ,产生扩散 .实验结果表明 ,带隙蓝移同退火温度和退火时间有关 ,最佳退火条件是 80 0℃ ,1 0 s.同时二次离子质谱 ( SIMS)的分析表明 ,电介质盖层 Si3 N4 和快速热退火 ( RTA)导致量子阱中阱和垒之间元素互扩 ,这种互扩是导致带隙蓝移的主要原因更多还原

【Abstract】 Band gap blue shift of InGaAs/InP MQWs structures by Impurity free Vacancy Disordering was investigated using Photoluminescence (PL). Si 3N 4 was used for the dielectric layer to create the vacancies. The compositions of sample give diffusion after undergoing rapid thermal annealing (RTA). The results indicate that the band gap blue shift depends on the annealing temperature and annealing time and the good annealing condition is 800℃ and 10 s. At the same time, the Secondary Ion Mass Spectrum (SIMS) shows Si 3N 4 dielectric layer and rapid thermal annealing (RTA) caused the quantum wells intermixing which is the main reason resulted in the band gap blue shift.更多还原