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温度对碳热还原合成SiC晶须的影响

INFLUENCE OF TEMPERATURE ON THE SYNTHETIC WHISKER SiC BY CARBON THERMAL REDUCTION METHOD

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【作者】 万隆李德意刘文超魏坤唐绍裘

【Author】 Wan Long, Li Deyi, Liu Wenchao, Wei Kun, Tang Shaoqiu (Hunan University)

【机构】 湖南大学湖南大学

【摘要】 以工业硅溶胶和碳黑为主要原料,用溶胶—凝胶和碳热还原法进行了合成SiC晶须的试验,探讨了合成温度对产物组成微观形貌的影响。结果表明:合成SiC晶须适合的温度为1600℃,在此条件下得到的产物中SiC 晶须含量最高(74%以上)、质量最好。

【Abstract】 The experiment to prepare synthetic whisker SiC by sol - gel process and carbon thermal reduction method is done mainly with the application of the raw materials of industrial silica sol and carbon black . The influence of synthesizing temperature on the micro- appearance of the product’ s composition is discussed in this paper. The results show that the suitable temperature for the formation of whisker SiC is at 1600℃. The SiC content obtained in the product reaches more than 74% under this con dition and possesses the highest quality.

  • 【文献出处】 陶瓷学报 ,Journal of Ceramics , 编辑部邮箱 ,2001年04期
  • 【分类号】TQ174
  • 【被引频次】9
  • 【下载频次】218
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