【摘要】 采用 Ga As作为衬底研究了 Hg Cd Te MBE薄膜的表面缺陷 .借助 SEM分析了不同缺陷的成核机制 ,确定了获得良好表面形貌所需的最佳生长条件 .发现 Hg Cd Te外延生长条件、衬底表面处理等因素与外延层表面各种缺陷有关 .获得的外延层表面缺陷 (尺寸大于 2 μm)平均密度为 30 0 cm- 2 ,筛选合格率为 6 5 % .更多还原

【Abstract】 The surface defects on MBE grown HgCdTe films on GaAs substrates were studied. The mechanism of surface defect formation was analyzed by SEM observations. The optimal growth conditions for obtaining a good morphological surface were determined. It was found that a variety of surface defects on epilayers are related to the HgCdTe growth conditions and the substrate surface treatment. The average density of surface defects (larger than 2 μm) for HgCdTe epilayers was obtained to be 300 cm -2 , and the yield was 65%.更多还原