【摘要】 本文用紧束缚方法计算了Ⅲ V半导体化合物GaP、GaAs、AlAs和InAs(311)B表面的表面电子结构 .半导体材料的体电子结构采用考虑次近邻相互作用的sp3 模型描述 ,表面电子结构通过求解形式散射理论的格林函数方程得到 .我们给出了四种半导体材料的表面投影能带结构和与它们相对应的各个表面态 ,讨论了各个表面态沿表面布里渊区高对称线Г Y S X Г的色散关系 .通过比较给出了Ⅲ V半导体化合物GaP、GaAs、AlAs和InAs等 (311)B表面共同的表面电子结构特征更多还原

【Abstract】 The surface electronic states of Ⅲ V compound,such as GaP?GaAs?AlAs and InAs(311) B surface have been calculated using scatting theory method.The bulk electronic structure of materials are described by the sp 3 model with second neighbor interaction.We presented the surface projected band structure along the high line of surface brillouin zone,the electron properties,such as localization and dispersion of this surface states are discussed.By comparision,the common electronic properties of this compound are conclude.更多还原