【摘要】 MBE生长的外延三元化合物材料InAs1 xSbx/AlSb/GaAs等是研制红外光通讯探测器的重要材料 ,准确检测这些半导体的禁带宽度Eg和组份x是个重要课题。该文简要地提出与本研究有关的二维 (2D)体系态密度D2D和自由载流子面密度等物理量的数学表达式并采用变温Vander Pauw Hall实验对上述半导体样品进行测试 ,分别用 2D和 3D体系的理论对实验数据进行分析处理 ,实验结果表明 :2D理论得出的Eg和x比 3D理论处理有明显改善 ,2D理论更适合于上述外延材料以及类似的多元外延的材料的测试分析更多还原

【Abstract】 The three compounds materials InAs 1 x Sb x/AlSb/GaAs developed by the method of epitaxy MBE are meaningful in the studies of infrared communication detectors. To measure the gap of these semi conductors and also their components is an important subject. Our paper gives briefly the mathematical formulas of the state density D2D and surface density of free carriers in 2D systems. We have also tested these samples by the Van der Pauw Hall temperature varying experience, and have treated the experimental data with by the theory of 2D and 3D systems. The results show that the Eg and x obtained by the theory of 2D are much better that of 3D theory. This means that the theory of 2D is more suitable in the testing and analyses for such materials by MBE and for similar materials by multi components epitaxy.更多还原