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半导体金属氧化物的室温固相合成研究
Study on Semiconductor Oxides Prepared by Solid State Reaction at Room Temperature
【摘要】 以无机盐为原料 ,用室温固相化学反应直接合成了SnO2 、In2 O3 、ZnO、Fe2 O3 等半导体金属氧化物的纳米粉体 ,用X -射线衍射技术和透射电子显微镜对产物的物相和形貌进行了表征观察 ,结果表明 ,固相化学反应完全 ,所得产物为理论产物 ,且均为纳米粒子
【Abstract】 N-type semiconductoring nanometer oxides including SnO 2?In 2O 3?ZnO?Fe 2O 3 were prepared by solid state reaction of inorganic compound at room temperature.The crystal structure and microstructure of the powders were studied by XRD and TEM.The results show that solid state reaction at room temperature are feasible and reasonable and the mean grain sizes are below 100 nm.
【关键词】 半导体;
金属氧化物;
室温;
固相化学反应;
【Key words】 semiconductor; metal oxides; room temperature; solid state reaction.;
【Key words】 semiconductor; metal oxides; room temperature; solid state reaction.;
- 【文献出处】 贵州大学学报(自然科学版) ,Journal of Guizhou University(Natural Science) , 编辑部邮箱 ,2001年03期
- 【分类号】TB383
- 【被引频次】13
- 【下载频次】139