【摘要】 用强流脉冲离子束 (HIPIB)方法通过高强度脉冲离子束照射到锡掺杂氧化铟 (ITO)陶瓷靶材上产生的二次等离子体快速地沉积到室温玻璃基片上制得ITO薄膜 .经计算得知 :二次等离子体的密度约 10 2 0 atoms/cm3,温度以实验的电子能量 (ET0 )表示约为 1.4eV ,在玻璃表面瞬时沉积速率达 2cm/s,比其它传统镀膜方法大几个数量级 ;并且瞬间在玻璃表面产生约 2 2 0 0℃的高温 .经一次脉冲发射可制得 65nm厚的膜 .EDX数据表明薄膜与靶材的化学组成相近 .通过原子力显微镜 (AFM )图像分析膜的表面形貌 ,在 1μm× 1μm范围内 ,薄膜表面的均方根粗糙度为 1.3 85nm ,说明沉积后的膜表面平整度良好更多还原

【Abstract】 Tin-doped indium oxide (ITO) films was deposited on glass substrate under room temperature by high intensity and high temperature plasma produced by the irradiation of high intensity (10 8 W/cm 2) pulsed (70 ns) ion beams onto an ITO ceramic target at a quick instantaneous deposition rate. The plasma density is calculated to be 10 20 atoms/cm 3 and the test electron energy value for the estimated plasma temperature( E T 0 ) is 1.4 eV. The deposition rate is about 2 cm/s, which is several orders of magnitude higher than that of any other conventional depositing technique. The temperature on the glass surface instantaneously reached 2 200 ℃ during the deposition. A film thickness of 65 nm on average is obtained in one shot. The EDX analysis indicates an identical composition of the target and films. The observation by atomic force microscopy (AFM) shows a smooth surface of the film as deposited.更多还原