【摘要】 采用脉冲准分子激光大面积扫描沉积技术 ,在Si(111)单晶衬底上沉积了多晶V2 O5 薄膜 ,经 3 0 0℃以上退火处理得到了具有高c -轴取向生长的V2 O5 薄膜 .3 0 0℃以上热退火处理的薄膜表面具有正常的化学计量比 (无氧缺位 ) ,晶粒间界明显 ,晶粒呈针棒状 ,晶粒尺寸在10 0～ 2 0 0nm之间 .采用X射线衍射 (XRD)、Raman光谱 (RS)、Fourier红外光谱 (FT -IR)及透射电镜扫描附件 (STEM )对沉积及不同温度下退火处理的样品进行了结构分析 .研究结果表明 :V2 O5 /Si薄膜经 40 0℃热处理后表面部分处于低价态的钒离子已被氧化为V2 O5 .更多还原

【Abstract】 In this paper, work concerning oriented crystal formation and structural properties of the films deposited on Si substrate with V 2O 5 target by PLD was reported. VO x thin films were succesfully synthesized on Si(111) by using scanning laser ablation technique. The structural properties of the thin films of as_deposited and annealed were analysed by using a scanning accessory of transmission electron microscope(STEM) and X -ray diffraction (XRD), Fourier transformation infrared spectrum (FT-IR) and Raman spectrum(RS). The as_deposited thin film shows lower orientation with polycrystalline structure but those annealed at temperature of above 300 ℃ show highly c -axis oriented growth with orthorhombic structure. The films become more stoichiometric and the grains grow bigger with higher annealing temperature. There are normal chemical estimate ratio (no oxygen vacancy), clear grain boundary and uniformly distributed stick grain on the film surface annealed at above 300 ℃, the grain size is 100～200 nm. The annealed films are good candidates for use as cathodes in thin film optical devices for their c -axis orientation growth and nano_crystalline structures.更多还原