【摘要】 用溶胶－凝胶法在Ｐｔ／Ｔｉ／ＳｔＯ２／Ｓｉ（１００）基底上制备Ｐｂ１－ｘＬａｘＴｉＯ３（ＰＬＴ，ｘ≤０．２）薄膜，研究薄膜的结构及其介电、电性质铁电性能。在６００℃ 下退火１ｈ的ＰＬＴ薄膜表现出单一的钙钛矿结构，（１００）择优取向明显。在室温下ＰＬＴ薄膜有典型的电滞回线。在ｘ≤０．２（摩尔比）的范围内，ＰＬＴ薄膜的矫顽场、剩余极化强度和随着Ｌａ的增加而降低，相对介电常数则随着Ｌａ的增加而增加。更多还原

【Abstract】 Pb1-xLaxTiO3 (PLT) thin films were fabricated by sol-gel spin on process onto Pt/Ti/Sio2/Si(100) substrates. We had investigated the crystal structure, dielectric and ferroelectric properties of PLT thin films according to lamthanum doping concentration. The films annealed at 600℃ for 1h had the single perovskite phase and preferential (100) orientation. The PLT films showed the typical polarization-electric field hysteresis loops. The coercive field and remnant polarization decreased with increasing La concentration. The effective dielectric constant increased according to the increase of La content.更多还原