【摘要】 利用 SIMS分析技术 ,研究了在 In Ga Al P和 Ga P材料中 ,MOCVD工艺参数对 Mg的掺杂行为的影响 .实验结果表明 ,在较高温度下 ,Mg在生长表面的再蒸发决定了 Mg的掺杂浓度随衬底温度增加呈指数下降 ;而当载流子浓度饱和时 ,杂质 Mg在材料中的置换填隙机制使得 Mg的激活率随 Cp2 Mg流量的再增加反而下降 .同时通过计算得到 Mg在 In Ga Al P及 Ga P中的再蒸发激活能分别约为 0 .9e V和 1.1e V更多还原

【Abstract】 In InGaAlP and GaP,the doping characteristics of Mg in MOCVD have been studied by using SIMS (Secondary Ion Mass Spectrometry) measurement.The experimental results show that the Mg incorporation is limited by the Mg revaporization from the growth surface at a higher temperature,and the Mg electrical activity decreases with the increasing Cp 2Mg flow-rate.The activation energy of Mg in InGaAlP and GaP is also obtained,respectively.更多还原