【摘要】 研究了采用高频 Plasma CVD技术在较低温度下 (30 0— 40 0℃ )生长以 Ga N为基的 - 族氮化物的可行性 ,在蓝宝石衬底上生长了 Ga N缓冲层 .热处理后的光致发光谱和 X光衍射表明 ,生长的 Ga N缓冲层为立方相 ,带边峰位于 3.15 e V.在作者实验的范围内 ,最优化的 TMGa流量为 0 .0 8sccm (TMAm=10 sccm时 ) ,XPS分析结果表明此时的 Ga/ N比为 1.0 3.这是第一次在高 / 比下得到立方 Ga N.相同条件下石英玻璃衬底上得到的立方 Ga N薄膜 ,黄光峰很弱 ,晶体质量较好更多还原

【Abstract】 GaN buffer layers were grown on sapphire substrates by Radio Frequency Plasma Chemical Vapor Deposition (RF plasma CVD)after post deposition annealing.XRD and PL spectra indicate the GaN buffer layers are of cubic structure and probably polycrystalline.PL and XPS analyses show the most optimized TMGa/TMAm flow rate is 0 08sccm/10sccm according to the experiments,and at this point,the average composition of GaN buffer layer is Ga 1 03 N.It is the first time that cubic GaN films were achieved at such a high Ⅴ/Ⅲ rate.Compared with the PL spectrum of GaN on silica glass substrates,the crystal quality of GaN on sapphire substrates are worse,which is probably caused by the mismatch of lattices and the thermal conductivity between GaN films and sapphire substrate.更多还原