【摘要】 微波集成电路和微波器件的设计需要准确地提取 HFET的小信号等效电路模型参数 .采用带回火的模拟退火算法从 S参数提取 HFET小信号等效电路模型参数 ,得到了高质量的解 .计算结果是全局最优解 ,摆脱了初始值的影响 ,并且克服了局部优化算法遇到的不收敛或收敛到错误解的问题 .利用测量得到的栅电阻 ,计算结果的精度可以进一步提高 .这个算法同样也适用于 HBT、电容和电感等器件模型参数的提取更多还原

【Abstract】 In the design of microwave devices and integrated circuits,it is very im portant to extract the HFET small signal equalized circuit m odel accurately.The solution of HFET model extraction with high quality using the simulated annealing al- gorithm is obtained.The solution is the global optim um without any influence of the initial value on it.What’s m ore,the method avoids the non- unique solution occuring frequently when the local optim um algorithm is used.Provided that the value of gate resistance is acquired from measurement,the precision of the solution can be improved further.The m ethod can also be used to extract the m odel param eters of HBT,capacitor and inductor.更多还原