【摘要】 研究了金属有机化合物气相外延（ＭＯＶＰＥ）方法在（０００１）氧化铝基底上生长的ＧａＮ 薄膜的微结构，目的在于解释ＧａＮ缓冲层在二步法生长过程中的作用及其对外延层晶体质量的影响．在缓冲层中观察到了高密度的结构缺陷，并发现了两种晶体结构（立方和六角）的ＧａＮ．进而对两种结构ＧａＮ的成因进行讨论，并对缓冲层和外延层中结构缺陷的关系进行了研究．更多还原

【Abstract】 Microstructures of GaN films grown by MOVPE on (0001) sapphire substrates were studied. High density defects were observed, and two phases of GaN identified in the GaN buffer layer. The reasons for the formation of the respective phases were investigated and the relationship between the microstructures of the GaN buffer layer and epitaxial layer was also studied.更多还原