【摘要】 使用深掺杂方法在Si材料中掺入Au原子后，其电阻率随温度T的变化关系从主要依赖于T－3/2项的浅掺杂材料变成主要依赖于exp(－E/KT)项的深掺杂材料，从而大幅度地提高了掺金Si材料对温度的敏感性。这样在理论上深掺杂Si材料比浅掺杂Si材料对温度的敏感性提高了约1000倍。对于深掺杂方法制成的微型流量传感器特性的测量证明了以上理论。深掺杂Si材料的应用不但大大提高了微型流量传感器的灵敏度，也大幅度地降低了响应时间。更多还原

【Abstract】 The change of resistivity of single crystal silicon material based on deep impurities mainly depends on an exponential term exp(- E/KT),which can enhance the temperature sensitivity by as much as 1,000 times than the T- 3/2term based on shallow impurities.It has been proved by the measurements of the micro- flow- sensors using Si with deep impurities. The application of the deep impurity silicon material not only enhances the sensitivity of the micro- flow- sensors,but asso reduces their response time greatly.更多还原