【摘要】 通过对拉曼谱仪和电极粗糙方法的优化 ,本文将表面拉曼光谱技术拓宽到了半导体硅电极表面的现场研究。文中观测了不同粗糙时间对硅刻蚀的影响 ,并实时考察了硅氢表面在开路电位下的氧化过程。实验结果表明 ,在以HF为主的湿法刻蚀中 ,硅表面的悬挂键主要被H而不是被F取代。更多还原

【Abstract】 In situ surface Raman spectroscopy has been extended to study silicon electrode surfaces by optimizing the Raman system and the surface roughening method. The time dependent etching processes were monitored in a dilute HF aqueous solution and the initial oxidation processes of the hydrogen-terminated surface in different pHs were studied at the open circuit potential. The results indicate that the silicon surface could be overwhelmingly terminated with hydrogen rather than fluorine in the HF based solution. The smoothening effect of OH - on the silicon surface is through the attack of the =SiH 2 site. It demonstrates that Raman spectroscopy is a powerful in situ technique for investigating the etching process of silicon surface.更多还原