【摘要】 提出了一种具有穿通基区的Si双极晶体管光探测器。通过优化器件结构参数，使基区在工作时完全耗尽，从而得到大的光增益和小的噪声电流。实验测光电转换增益大于150,000；器件具有良好的噪声特性，噪声功率与器件的直流偏置电流成正比，即in2=2qIcΔf。更多还原

【Abstract】 Novel Si phototransistors with a punchthrough base have been fabricated with regular planar technology. High gain and low noise have been achieved in this kind of device due to the fully depletion of base. The optical conversion gains larger than 150,000 have been observed when incident light power is 0.1nW . In addition to very high gain, the unique structure of the device also results in low output noise. The measured output noises at different currents well fit the wellknown relation in2=2qIcΔ f .更多还原