【摘要】 综述了 PZT厚膜单元声纳换能器和 8× 8阵列声纳换能器的制备方法、结构和性能 ,并介绍了 PZT厚膜声纳换能器的应用及发展前景。该厚膜是利用改进的 sol- gel工艺制备的 ,厚度为 4～ 12 μm。4μm厚的 PZT厚膜的纵向压电系数 d3 3 为 140～ 2 40 p C/ N,剩余极化强度 Pr为 2 8× 10 - 6 C/ cm2 ,矫顽场强 EC为 30× 10 3 V/ cm,相对介电系数 εr为 140 0。更多还原

【Abstract】 In Chinese. The fabrication techniques, structure and performance for PZT thick-film sonar t ransducer and 8×8 arrays sonar transducer is presented. The potential applicat i ons and development of PZT sonar transducer are introduced. 4-12 μm PZT thick -fi lms are fabricated using modified sol-gel process. The longitudinal piezoelect ri c coefficient d33 of 140-240 pC/N, remanent polarization pr of 28×10 -6 C /cm2, a coercive field E_c of 30×10 -6 V/cm, and dielectric constant of 1 400 are measured on 4 μm thick film. (7 refs.)更多还原