【摘要】 用MEVVA离子源将La离子注入到单晶硅中形成掺杂层 ,用XRD ,SEM分析了掺杂层的物相和表面形貌 .分析结果表明 ,在强流离子注入后 ,掺杂层中有硅化物形成 ,且形成相的种类与注量、束流密度及后续热处理条件密切相关 .对La硅化物的形成过程进行了讨论 .更多还原

【Abstract】 La ions are implanted into single silicon to form a doped layer. Ion implantation is carried out on MEVVA ion source. The phases of the doped layers are determined by XRD, SEM is used to analyze the micrograph of the implanted layers. The result indicates that there are La silicides formed in the implanted layers. The phase of La silicides varies upon ion fluence,flux and post annealing conditions. A mechanism of silicide formation is discussed.更多还原