【摘要】 研究了高温和大电流应力对 ＴｉＡｌ／ ＧａＡｓ和 ＴｉＰｔＡｕ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管 Ⅰ～ Ⅴ特性及对 Ｒｉｃｈａｒｄｓｏｎ图 的影响．研究发现，随着应力时间的增加，在 Ｒｉｃｈａｒｄｓｏｎ图上，对ＴｉＡｌ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管势垒高度快速降低， Ｒｉｃｈａｒｄｓｏｎ常数和二极管的面积之积 ＳＡ~＊也快速减少，而 ＴｉＰｔＡｕ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管势垒高度和 ＳＡ~＊先快速增 加，后趋于稳定常数．在Ⅰ～Ⅴ曲线上，ＴｉＡｌ／ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管反向饱和电流增加，ＴｉｐｔＡｕ／ＧａＡｓ Ｓｃｈｏｔｔｋｙ 二极管反向饱和电流先快速减少，后趋于常数．这是由于在金属／ ＧａＡｓ界面形成了金属间化合物的结果．更多还原

【Abstract】 Effect of high temperature and high current stress on I-V characteristics and Richardson plots of TiAl / GaAs and TiptAu / GaAs Schottky diodes are studied. It is found that as stressing time increases, for TiAl / GaAs Schottky diode, the banter height decreases rapidly, the product of Richardson constant A* and area S of diode decreases quickly, whereas for TiptAu / GaAs Schottky diode, the barrier height and the product of A* and S increase first and then trends to be a constant. In the I-V characteristics, as stressing time increases, the saturation current of TiAl / GaAs Schottky diodes increases, for TiptAu / GaAs Schottky diodes, the saturation current decreases first and then trends to be a constant. These results have been attributed to the intermetallic compounds formed formed in the metal / GaAs interface.更多还原