【摘要】 基于对锡掺杂三氧化铟 ( Sn- doped In2 O3,简称 ITO)和铝掺杂氧化锌 ( Al- doped Zn O,简称 ZAO)薄膜退火前后 XRD数据的分析 ,研究了薄膜晶格常数畸变的原因 ,同时讨论了 ITO和ZAO薄膜的导电机制 .结果表明 ,低温沉积 ITO薄膜的晶格膨胀来源于 Sn2 +对 In3-的替换 ,导电电子则由氧缺位提供 ;高温在位制备和退火处理后薄膜的晶格收缩来源于 Sn4 + 对 In3+ 的替换 ,导电电子则主要由 Sn4 + 取代 In3+ 后提供 .低温 ZAO薄膜的晶格畸变来源于薄膜中的残余应力 ,导电电子的来源则同高温在位和退火处理后的薄膜一致 ,即由 Al3+ 对 Zn2 + 的替换和氧缺位两者共同提供更多还原

【Abstract】 The lattice distortion of both ITO and ZAO films before and after being annealed has been discussed based on their own XRD data, respectively. The results indicate that the lattice expansion of as\|deposited low temperature ITO film is attributed to the replacement of Sn 2+ for In 3+ , and the free carriers are supplied by the oxygen vacancies. For those as\|grown high temperature or annealed ITO films, the free carriers are mainly provided by the substitution of Sn 4+ for In 3+ . The lattice distortion of as\|deposited low temperature ZAO film is supposed to be resulted from the residual stress. The free carriers are given by both the replacement of Al 3+ for Zn 2+ and oxygen vacancies, which is agreement with that of in high temperature as\|grown or annealed ZAO films.更多还原