【摘要】 使用 MOCVD技术在 Al2 O3衬底上生长了 Ga N∶ Mg薄膜 .通过对退火后样品的光电性能综合分析 ,研究了掺 Mg量对生长 P型 Ga N的影响 .结果表明 :要获得高空穴载流子浓度的 P型 Ga N,Mg的掺杂量必须控制好 .掺 Mg量较小时 ,Ga N∶ Mg单晶膜呈现 N型导电 ,得不到 P型层 ;掺 Mg量过大时 ,会形成与 Mg有关的深施主 ,由于深施主的补偿作用 ,得不到高空穴浓度的 P型 Ga N.生长 P型 Ga N的最佳 Cp2 Mg/TMGa之比在 1 /660— 1 /330之间更多还原

【Abstract】 The GaN∶Mg films are grown on Al 2O 3(0001) substrates by MOCVD technique. The influence of the doping Mg dose in growth of P\|GaN films is studied by investigating their optical and electrical properties after thermally annealied. Our research results indicate that the doping dose of Mg is very important. With light doping dose of Mg, the GaN∶Mg films are N\|type conducting. With high doping dose, deep donors which are related with Mg are formed, and it is difficult to obtain P\|GaN of high hole concentration. Our results show that the optimum ratio of Cp 2Mg/TMGa is between 1/660 and 1/330 in growth of P\|GaN films.更多还原