【摘要】 利用低压金属有机化合物汽相淀积方法，以液态ＣＣｌ４ 为掺杂源生长了高质量的碳掺杂ＧａＡｓ／ＡｌＧａＡｓ外延材料，研究了ＣＣｌ４ 流量、生长温度和Ⅴ／Ⅲ比等因素对外延材料中的碳掺杂水平的影响．采用电化学ＣＶ 方法、范德堡霍耳方法、低温光致发光谱和Ｘ射线双晶衍射回摆曲线测量等方法对碳掺杂外延材料的电学、光学特性进行了研究．实验制备了空穴浓度高达１．９×１０２０ｃｍ － ３的碳掺杂ＧａＡｓ 外延材料和低温光致发光谱半宽小于５ｎｍ 的高质量碳掺杂Ａｌ０．３Ｇａ０．７Ａｓ 外延层．在材料研究的基础上，我们以碳为Ｐ型掺杂剂生长了ＧａＡｓ／ＡｌＧａＡｓ／ＩｎＧａＡｓ应变量子阱９８０ｎｍ 大功率半导体激光器结构，并获得了室温连续工作１Ｗ 以上的光功率输出．更多还原

【Abstract】 High quality carbon doped GaAs/AlGaAs materials are grown by low pressure\|Metalorganic Chemical Vapor Phase Deposition method,using liquid carbon tetrachloride as dopant.The dependency of doping level on growth parameters such as CCl\-4 molecular flow,growth temperature and Ⅴ/Ⅲ ratio is investigated.The electrical and optical properties are studied by electrochemistrical capacity voltage (CV),Hall effect,low temperature photoluminescence spectral and X\|ray double crystal diffraction methods.Highly carbon doped GaAs epitaxial layers with hole concentration up to 1.9×10 20 cm\+\{-3\} and high optical quality (PL FWHM less than 5nm) are obtained.GaAs/AlGaAs/InGaAs strained quantum well 980nm high power semiconductor laser structure are also grown,and the output light power of continuous wave laser is more than 1W at room temperature.更多还原