【摘要】 采用高质量的 MBE材料 ,成功地制作了单胞栅宽 2 0 mm的芯片。用栅与 n+凹槽自对准和辅助侧墙工艺制作了栅长 0 .45 μm的 Ti Pt Au栅 ,欧姆接触采用 Au Ge Ni合金工艺 ,采用 PECVD Si N钝化 ,空气桥结构及芯片减薄 Via-Hole工艺。经内匹配得到了单胞芯片 3.7～ 4.2 GHz下 Po≥ 7.3W,Gp≥ 8d B,ηadd>2 5 % ;4胞合成器件 Po≥ 2 5 W,Gp>7d B,ηadd>2 5 %的良好结果。更多还原

【Abstract】 The single cell 20mm gatewidth GaAs MESFET has been fabricated by using high quanlity MBE materials.A 0 45μm gate length TiPtAu with self align to n + recess formed by side wall technology,and AuGeNi ohmic contact,PECVD SiN passivation,air bridge and via hole technology was adopted.At 3 7～4 2GHz,the single cell internally matched FET: P o≥7 3W, G p≥8dB, η add >25%;the four cell internally matched FET: P o≥25W, G p>7dB, η add >25%.更多还原