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PLZT驰豫铁电陶瓷偏压压电效应的研究

PIEZOELECTRIC EFFECT INDUCED BY DIRECT CURRENT BIASIN PLZT RELAXOR FERROELECTRIC CERAMICS

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【作者】 伍建新庄志强

【Author】 Wu JianxinZhuang Zhiqiang (Faculty of Materials Science and Engineering,South China University of Technology,Guangzhou,510641)

【机构】 华南理工大学材料科学与工程学院

【摘要】 本文研究了铌掺杂的PLZT驰豫铁电陶瓷在不同直流偏压及温度下的介电常数ε33,平面机电耦合系数kp和等效横向压电常数d31。实验表明,铌掺杂的PLZT驰豫铁电陶瓷的d31值可由直流偏压控制及d31值的温度系数远小于PMN-PT系陶瓷。室温下2mol%和3mol%的铌掺杂的PLZT10/65/35驰豫铁电陶瓷在10KV/cm的偏压下|d31|分别为205pC/N和160pC/N。根据公式d31=2·Q12·P3·ε0·ε33计算了不同偏压下的d31值,理论值和测量值比较相符

【Abstract】 The dielectric constant 33,electromechanical planar coupling factor kp and effective transverse piezoelectric coefficient d31 under direct current bias at different temperatures were investigated for niobium-doped PLZT relaxor ferroelectric ceramics.The experiments show that d31 of Nb-doped PLZT relaxor ferroelectric ceramics can be controlled by direct current bias and its temperature dependence is much less compared to that of PMN-PT ceramics.The values of |d31| under a bias of 10KV/cm for 2mol% and 3mol% Nb-doped PLZT 10/65/35 relaxor ferroelectric ceramics are 205pC/N and 160pC/N respectively at room temperature.d31 was calculated by equation d31=2Q12P3o33 and the results agree with the measured ones.

【基金】 广东省自然科学基金
  • 【文献出处】 中国陶瓷 ,CHINA CERAMICS , 编辑部邮箱 ,1999年03期
  • 【分类号】TM282.06
  • 【被引频次】2
  • 【下载频次】132
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