【摘要】 ＳｉＧｅ 合金具有较高的载流子迁移率与较低的结晶温度， 比Ｓｉ 更适合用作薄膜晶体管（ ＴＦＴ） 。最近，我们已证实，利用Ａｌ２Ｏ３ 作多晶ＳｉＧｅ ＴＦＴ的门绝缘子，可使界面得到显著改善。虽然已经证明，由Ｓｉ 缓冲层的高温氧化形成的ＳｉＯ２ 可改善界面质量，但是还不清楚在ＳｉＧｅ 有源层与Ａｌ２Ｏ３ 门电介质之间插入一α＿Ｓｉ 缓冲层能否进一步提高界面的质量。在本研究中，对于有、无α＿Ｓｉ 缓冲层的多晶ＳｉＧｅ ＴＦＴ 的性能作了比较更多还原

【Abstract】 The higher carrier mobility and lower crystallization temperature of SiGe alloys pot_ entially make them more suitable candidates than Si for implementing thin film transistors(TFTs). Re_ cently, we have demonstrated significantly improved interface using Al2O3 as the gate insulators for poly_SiGe TFTs. While SiO2 formed by high temperature oxidation of a thin Si buffer layer has been shown to improve the interface quality, it is not clear whether the quality of the interface could be further enhanced by the insertion of an α_Si buffer layer between the SiGe active layer and the Al2O3 gate dielectric. In this work, the performance of poly_SiGe TFTs with and without α_Si buffer layers are compared.更多还原