【摘要】 用射频（ＲＦ）共溅射复合靶技术和Ｎ２ 气保护下高温退火的后处理方法，在Ｓｉ 衬底上制备出了碳化硅（ＳｉＣ） 薄膜，通过傅里叶变换红外光谱（ＦＴＩＲ） 、室温光致发光谱（ＰＬ） 、电阻率—温度关系谱、Ｘ 射线光电子谱（ＸＰＳ）等测量手段，研究了淀积膜和不同温度退火薄膜的结构、电学和光致发光等性质．与采用ＳｉＣ合金靶制备的薄膜作分析比较，结果表明，采用简单经济的复合靶共溅射方法，可以制备出性能较好的ＳｉＣ薄膜；通过调整靶中Ｓｉ，Ｃ比例并经高温退火后，有效地改善了薄膜的结构和性能．更多还原

【Abstract】 SiC films on Si substrates were obtained by RF co sputtering of the Si and C compound target and annealing at high temperatures in N 2 atmosphere. The structures, electrical properties and room temperature photoluminescence(PL) of as deposited films and those annealed at different temperatures were studied by Fourier transform infrared spectrum(FTIR), PL, the dependence of resistance and measurement temperature and X ray photoelectron spectroscopy(XPS) techniques. The properties of SiC films were good. As compared with RF sputtering of SiC alloy target, the RF co sputtering of the compound target technique was simpler and more economical. By proportioning Si to C in the compound target and high temperature annealing, the structures and properties of the SiC films were distinctly improved.更多还原