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Cu层厚度对NiFe/Cu/Co的巨磁电阻效应影响
Dependence of Cu Layer Thickness on the Giant Magneto Resistance in NiFe/Cu/Co Multilayer Films
【摘要】 用磁控射频溅射法制备了NiFe/Cu/Co多层膜;研究了薄膜的磁特性和磁电阻特性与中间层Cu厚度的关系.在适当的Cu层厚度下(大约为2nm),制备出了具有很好自旋阀巨磁阻效应的多层膜.研究表明,在弱磁场下,薄膜的磁电阻回线的斜率与原来的磁化过程有关,因此该薄膜材料可以用于巨磁电阻存储器中
【Abstract】 NiFe/Cu/Co multilayer films are deposited by magnetron RF sputtering system. The dependence of Cu layer thickness on the magnetic properties and giant magneto resistance properties are studied. At an appropriate thickness (about 2nm), the large spin valve giant magneto resistance effect films are obtained. In the minor magnetic field, the slope of the magneto resistance vs. Field curve depends on its past magnetization history. This film can be used in magneto resistance RAM.
【关键词】 多层膜;
巨磁电阻效应;
磁控射频溅射;
【Key words】 multilayer film; giant magneto resistance; magnetron RF sputtering system;
【Key words】 multilayer film; giant magneto resistance; magnetron RF sputtering system;
【基金】 国家自然科学基金
- 【文献出处】 华中理工大学学报 ,JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY , 编辑部邮箱 ,1999年01期
- 【分类号】TN304.7
- 【下载频次】106