【摘要】 本文使用电子回旋共振等离子体增强化学沉积方法生长ＧａＮ。利用气体分配器产生一种局域高反应物浓度环境，在此环境下，测量了等离子体的电子温度Ｔｅ，等离子体密度ｎｉ以及饱和离子流密度Ｊｉ与微波功率，气体压力的关系。根据这些参数，优选了沉积条件，得到了纯净的纤锌矿结构的ＧａＮ薄膜，并具有很好的光学特性。ＡＥＳ和ＸＰＳ的实验表明薄膜中的氮空位及伴生镓被抑制。根据膜厚值，计算出的沉积速度为１μｍ／ｈｒ，比通常的速度大一个数量级。更多还原

【Abstract】 The ECR plasma enhanced deposition was used to grow GaN film.A high local concentration of reactant was created by a gas-distributor. The ECRcondition was diagnosed. The ion density m, electron temperature Te and ion currentdensity Ji were measured by Langmuir probe and Faraday cup. The growth conditionwas optimized in the light of these parameters. The wurtzite GaN with fine opticalproperty was grown in this condition. The results of AES and XPS showed the film isgrown without excess N vacancy and/or Ga co-deposition. The growth rate, 1m/hr,was achieved which was one-magnitude -order larger than usual ECR deposition.更多还原