【摘要】 采用ＧＳＭＢＥ工艺生长的单晶ＳｉＧｅ ＨＢＴ 结构材料，经Ｘ射线双晶衍射，透射电镜和扩展电阻深度分布测量说明：该材料晶体完整性好，无应力弛豫，界面平整陡峭．发射区Ｎ 型掺杂浓度２×１０１９～１×１０２０ｃｍ － ３，厚度１００～２００ｎｍ ；基区ＳｉＧｅ合金Ｇｅ 组分０．０５～０．２０，Ｐ型掺杂浓度５×１０１８ｃｍ － ３，厚度４０～１００ｎｍ ；集电极浓度～１×１０１６ｃｍ － ３．达到了生长ＳｉＧｅ ＨＢＴ 材料的条件．更多还原

【Abstract】 In situ GSMBE growth of Si/SiGe/Si n\|p\|n HBT device material is demonstrated with designed structural and electrical profiles, as verified from characterizations by X\|ray diffraction, transmission electron microscopy, and spreading resistance profiling analysis. The material for fabrication of SiGe HBT devices can now be grown,in which the emitter is 100～200nm thick with Phosphor doping lever is 2×10 19 ～1×10 20 cm\+\{-3\},the base is 40～100nm,Ge composition is 0 05～0 20,and the base Boron doping level is >5×10\+\{18\}cm\+\{-3\},the carrier concentration in the collector is ～1×10\+\{16\}cm\+\{-3\}. PACC:6855, 7340更多还原