【摘要】 采用深能级瞬态谱技术 （ＤＬＴＳ）， 测试了等离子体增强化学汽相淀积 （ＰＥＣＶＤ） 法低温制备的富氮的ＳｉＯｘＮｙ 栅介质膜的电学特性（界面态密度、俘获截面随禁带中能量的变化关系），结果表明，采用合适的ＰＥＣＶＤ低温工艺淀积ＳｉＯｘＮｙ 膜可以制备性质优良的栅介质膜更多还原

【Abstract】 Electrical characteristics of nitrogen rich SiO x N y film produced by plasma enhanced chemical vapor deposition(PECVD)were tested by DLTS experiment.These include interface state density,capture cross section of interface state.It is found that thin gate medium film with better electrical characteristics can be achieved by depositing SiO x N y film with appropriate PECVD low temparaure technology.更多还原