【摘要】 主要描述了ＧａＮ中施主和受主杂质的能级、氢在掺杂中的作用以及空位的某些特性，同时讨论了该领域未来的研究趋向。关键词更多还原

【Abstract】 In this paper , the properties of impurities and defects in GaN are described. These properties include the energy levels of donors and acceptors , the role of hydrogen in doping and the characterization of vacancies. Also the research trend in this area is discussed.更多还原