【摘要】 报道了ｎ型ＧａＡｓ上欧姆接触的制备及其可靠性，以及基于欧姆接触退化的ＧａＡｓＭＥＳ－ＦＥＴ的失效分析。结果表明，ｎ型ＧａＡｓ上欧姆接触的制备已日趋成熟，接触电阻有所减小，表面形貌及热稳定性方面都得到了很大程度的提高，接触材料也日趋丰富，ＧａＡｓＭＥＳＦＥＴ的失效分析方法也有明显改进。更多还原

【Abstract】 The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper.The results show that the fabrication of ohmic contact on n type GaAs has deve loped a lot,contact resistance has decreased,surface morphology and thermal reliability have been improved very much,and contact materials have become richer.The method of GaAs MESFET failure analysis has been improved greatly.更多还原