【摘要】 研究了硅光电二极管经快中子（注入剂量为1011cm2、能量2．45MeV）和O+++（注入剂量为1010cm－2、能量12MeV）辐照后光电参数的变化规律，并通过光谱光电流的变化，对辐照损伤的空间分布进行了分析。结果表明：两种辐照均引起器件的光电流下降、暗电流增加。在本实验条件下，快中子造成的损伤轻微且均匀地分布在整个器件体内，而O+++辐照损伤区集中在器件表面附近，其损伤较快中子的严重。更多还原

【Abstract】 The variation in photoelectronic parameters of Si photodiodes under fast-neutron (with the dosage of 1011 per cm2, 2. 45 MeV) or O+++ ion (with the dosage of 1010 per cm2, 12 MeV) irradiations is studied. The space distribution of irradiation damage is analyzed in terms of the spectrum photocurrent. The results show that both fast - neutron and O+++ ion irradiations cause the reduction of the photocurrent and the increase of the dark current for the device. In the present experiment only a little damage is caused by the fast - neutron irradiation, which is well distributed over the whole inner body of the device;Whereas the damage caused by the O+++ ion irradiation is distributed around the surface of the device, which is more serious than that of the fast ca neutron irradiation.更多还原