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直流反应磁控溅射法注积ZrN薄膜

PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING

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【作者】 吴大维张志宏罗海林郭怀喜范湘军

【Author】 WU Dawei; ZHANG Zhihong; LUO Hailin; GUO Huaixi; FAN Xiangjun (Correspondent: WU Dawei, Department of Physics, Wuhan University, Wuhan 430072)

【机构】 武汉大学

【摘要】 采用直流反应磁控溅射法淀积ZrN薄膜发现在(100)晶向硅片上ZrN薄膜按(111)晶向生长,控制生长工艺可以获得ZrN(111)晶向的外延生长膜.

【Abstract】 ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditions,a (111) oriented epitaxial ZrN film could be obtained. The chemical properties and thermal stability were also investigated.

【基金】 国家自然科学基金!59571047
  • 【文献出处】 材料研究学报 ,CHINESE JOURNAL OF MATERIAL RESEARCH , 编辑部邮箱 ,1997年02期
  • 【分类号】TN305
  • 【被引频次】26
  • 【下载频次】143
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