节点文献
直流反应磁控溅射法注积ZrN薄膜
PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING
【摘要】 采用直流反应磁控溅射法淀积ZrN薄膜发现在(100)晶向硅片上ZrN薄膜按(111)晶向生长,控制生长工艺可以获得ZrN(111)晶向的外延生长膜.
【Abstract】 ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditions,a (111) oriented epitaxial ZrN film could be obtained. The chemical properties and thermal stability were also investigated.
【关键词】 ZrN薄膜;
DC反应磁控溅射;
外延生长;
薄膜电阻材料;
【Key words】 Zirconium nitride film DC reactive magnetron sputtering epitaxial growth film resistance material;
【Key words】 Zirconium nitride film DC reactive magnetron sputtering epitaxial growth film resistance material;
【基金】 国家自然科学基金!59571047
- 【文献出处】 材料研究学报 ,CHINESE JOURNAL OF MATERIAL RESEARCH , 编辑部邮箱 ,1997年02期
- 【分类号】TN305
- 【被引频次】26
- 【下载频次】143