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MZOS结构的电学性质及退火效应

Electrical Properties and Annealing Effects of MZOS Structure

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【作者】 亢效虎; 何山虎; 桑保生;

【Author】 Kang Xiaohu (Physics Division , Lanzhou Medical Academy, Lanzhou 730000)He Shanhu and Sang Baosheng (Department of Physics, Lanzhou University, Lanzhou 730000)Received 24 Octorber 1996, revised manuscript received 28 February 1997

【机构】 兰州医学院物理教研室!兰州; 730000; 兰州医学院物理系!兰州;

【摘要】 本文研究了MZOS结构的电学性质及热处理效应,并进行了X线衍射分析和电子能谱分析.发现适当温度下的氧退火处理对改善ZnO膜的C轴对称性、降低Si表面有效电荷密度有显著效果.

【Abstract】 The elcetrical properties and annealjng effects of MZOS structure are experimentally studied, and the X-ray diffraction diagram and the electron spectrum are presented. It is found that the annealing treatment at appropriatc temperature results in good effects in improving the c-axis symmetry of ZnO, as well as in decreasing the surface charge density.

  • 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1997年12期
  • 【分类号】TN304
  • 【被引频次】3
  • 【下载频次】15
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