节点文献
GaAs/GaAlAs量子阱双色红外探测器的光电性质的研究
Photoelectric Properties of Two-Color GaAs/GaAlAs Quantum Well Infrared Photodetectors
【摘要】 本文综述了有关新型的GaAs/AlGaAs体系双色量子阱红外探测器的结构特性和光电特性的研究工作.双色探测器工作在3~5μm及8~12μm大气窗口波段范围,是光伏响应模式和光导响应模式相结合的偏压控制型两端器件.研究内容包括探测器的器件结构特性、红外光吸收特性、红外光电流响应、暗电流、噪声特性和探测率测试分析等等.首次从理论和实验两方面探讨有关量子阱束缚子能带到扩展态中不同虚能组之间的光跃迁问题及光电子输运问题.
【Abstract】 The structural and photoelectric properties of a new voltage-tunable two-color(3~5μm and 8~12μm) GaAs/AlGaAs multiple quantum well infrared photodetectors(QWIP) are reviewed in this paper. The measurements and theoretical analysis includeoptical absorption, infrared photocurrent responsivity, dark current, noise character, aswell as detectivity. A detailed discussion is made on the device physics of the intersubbandtransitions based on photoexcitation from bound state to different virtual energy levels inthe continuum. These results allow a better understanding of the optical and transport behaviors and thus an optimization of the QWIP performance.
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1997年08期
- 【分类号】TN21
- 【被引频次】4
- 【下载频次】211