【摘要】 本文研究了固体C60和n型GaAs构成的异质结的电学特性，电流-电压测量结果表明这种接触具有相当理想的整流特性，其理想因子接近于1．电流-温度测量表明，在固定正向偏压下，其电流是温度的指数函数，从中可以确定接触的有效势垒高度为1．02eV高频C-V和深能级瞬态谱（DLTS）测量结果表明，在GaAs导带以下0．35eV附近存在着密度为1011／cm2的界面态，这些界面态可能起源于C60和GaAs的相互作用．更多还原

【Abstract】 The electrlcal properties of the heterojunction of solid C60/n-type GaAs arestudied. The results of current-voltage measurements indicate that this contact has apretty ideal rectifying property, and the idea1ity factor is near to 1. The current-temperaturemeasurements show that under a fixed forward bias the current is an exponential functionof reciprocal temperature from which the effective barrier height of the contact isdetermined to be 1. 02eV. High frequencies C-V and deep level transient spectroscopy (DLTS)measurements show that at C60/GaAs interface there is a trap with denslty of about 1011/cm2 and with energy level at 0. 35eV below the conduction band. The trap maybe originatefrom interaction of C60 and GaAs.更多还原