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氢原子侵蚀作用的研究

INVESTIGATION ON ATOMIC HYDROGEN ETCHING IN FILAMENT-ASSISTED CVD DIAMOND FILMS

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【作者】 李兴无耿东生张贵锋郑修麟

【Author】 Li Xingwu;Geng Dongsheng;Zhang Guifeng;Zheng Xiulin(Dept of Materials Science and Engineering,Northwestern Polytechnical University,Xian 710072)

【机构】 西北工业大学材料科学与工程系

【摘要】 通过热力学计算和动力学分析,研究了热丝CVD金刚石薄膜沉积过程中,氢原子对石墨相和金刚石相的侵蚀作用。结果表明:当衬底温度在823K~1273K间变化时,氢原子和石墨相反应的表观活化能小于氢原子和金刚石相反应的表观活化能.这是氢原子更易侵蚀石墨相的原因所在。

【Abstract】 Based on thermodynamic calculation and kinetic analyses, the etching effectof hydrogen atom to graphite and diamond phases duririg the deposition processof diamond films by filament-assisted CVD have been investigated. The calcula- tion and experimental results show that the etch rate of active H to graphitic car-bon phase is higher then that to diamond phase when the substrate temperatureis from 823K to 1273K. The fundamental reason lies in the apparent activationenergy of reactions between hydrogen atom and graphitic phase is smaller thanbetween hydrogen atom and diamond phase.

【关键词】 金刚石薄膜热丝CVD氢侵蚀
【Key words】 diamond filmsfilament-assisted CVDhydrogen etching
  • 【文献出处】 微细加工技术 ,MICROFABRICATION TECHNOLOGY , 编辑部邮箱 ,1995年04期
  • 【分类号】O47
  • 【被引频次】2
  • 【下载频次】39
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