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硅在cBN单晶合成中的行为

BEHAVIOR OF Li8SiN4 ON cBN SYNTHESIS

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【作者】 周艳平阎学伟赵廷河马贤锋

【Author】 Zhou Yanping,Yan Xuewei,Zhao Tinghe,Ma Xianfeng(Changchun Institute of Applied Chmistry, Chinese Academy of Sciences, Changchun 130022)

【机构】 中国科学院长春应用化学研究所

【摘要】 实验制备了复合氮化物Li_8SiN_4,并对合成温度、合成时间、气流量等因素的影响以及产物的稳定性进行了讨论。研究了Li_8SiN_4作为触媒添加剂时硅在cBN单晶合成中的作用。结果表明:cBN晶体多为截角八面体,晶面致密光滑;硅参与cBN的合成反应,并以SiO_2的形式沉积在cBN表面。

【Abstract】 Ternary nitride Li8SiN4 is prepared at 700~750℃ in N2 by solid state reactionwith LiH and Si3N4. Effects of reaction temperature,time and circumstance as well as stabilityon pure phase Li8SiN4 are studied in detail.Cubic BN is synthesized using Li-complex nitride andadditive Li8SiN4 as catalyst-solvent in order to examine the behavior of silicon. The morphologyand surface structure of cBN crystals are observed by SEM. Most of cBN crystals show off trun-cated octahedral shapes,and crystal surfaces are smooth and dense.The results suggest thatLi8SiN4 involves in the reaction for hBN to cBN and is in the form of SiO2 deposited on its sur-face.

【关键词】 cBN合成复合氮化物表面形态
【Key words】 cBN synthesisternary nitridesurface structure.
【基金】 国家自然科学重点基金
  • 【文献出处】 高压物理学报 ,CHINESE JOURNAL OF HIGH PRESSURE PHYSICS , 编辑部邮箱 ,1995年03期
  • 【分类号】O7
  • 【被引频次】1
  • 【下载频次】55
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