【摘要】 以小注入条件下的注入少子分布为初始值，本文依据送代法首次得到了适用于任意注入条件，基区从指数掺杂分布到均匀掺杂分布的集电极电流密度和基区渡越时间的解析表达式．三次选代的解析结果与数值迭代结果比较表明：在注入发射结电压ＶＢＥ≤１．０Ｖ的情况下，三次迭代形成的集电极电流密度和基区渡越时间的解析表达式有效．更多还原

【Abstract】 Abstract Based on iteration method with initial small injected minority carrier profiles,analytical expressions of collector current density and base transit time are first presented for arbitrary doping base and injection levels. Comparing the analytical results with the numeric, following conclusion is obtained: under the condition of injected emitter-base junction voltage VBE≤1. 0V, the analytical expressions of the collector current density and the base transit time obtained from the three time iteration processions are valid.更多还原