【摘要】 根据半导体材料的性能参数,对多晶CdS/Cu₂S薄膜太阳电池在各种浓度下的光伏特性作了较深入的分析和计算。计算中考虑到耗尽区宽度的变化以及内表面复合损失对光电流J_L的影响,同时还用Rotlwarf晶界复合损失模型计算了晶粒度对光电流及光伏特性的影响。存在一个最佳Cu₂S受主浓度N_a=10¹⁵cm^-3,单晶和晶粒度R=3μm的多晶电池,其转换效率分别为13.6％和13.3％。更多还原

【Abstract】 Calculation and analysis of the photovoltaic characteristics have been achievel for various concentrations of polycrystalline CdS/Gu2S heterjunction solar cell. Using Rothwarf’s grain boundary recombination-lose model, we have abtained the conversion efficiency 13.6%, and the short-circuit current density 28.34 mA/cm2, the open-circuit Voltage 0.6V and the fill factor 80.4% respectively. Our major results are as follows:The effect of doping impurity density Na on the light generated current JL* is much more important than the effect of grain size R.The doping impurity density has a optimal value for which the light generated current reaches its maximum value.After corrected concerning to the experimental conditions, the resultant efficiencg 9.46-11.59% is close to the lately reported experimental value 9.15%.更多还原