【摘要】 本文提出了MOS器件1/f噪声的双态系统理论,在此基础上分别推导出MOS器件隧道模型和热激发模型的1/f噪声理论表达式,由此得到迄今比较精确完整的1/f噪声的温度因子和偏置因子。理论分析指出,两个模型的温度因子以及两个模型的偏置因子,在强反型时其变化规律均分别相似,仅在弱反型时变化规律才有明显的差别。理论与实验比较后表明,热激发模型能够解释现有的许多实验结果,尤其包括隧道模型所不能解释的弱反型1/f噪声实验现象,因而热激发模型有可能是更精确的一种模型。更多还原

【Abstract】 The theory of two-state systems for 1/f noise in MOSFETs is proposed. The completeanalytical expressions of 1/f noise in MOSFETs are derived on the basis of this theory for thepuretunneling model and the thermal activation model. The analyses show that the temperaturedependencies as well as the bias dependencies for both models in strong inversion exhibitsimilar variations, but in weak inversion both are different from each other. Comparisions ofthe theory with experiments show that the thermal activation model, which can explain moreexperimental results, may be preciser than the pure tunneling model for describing 1/f noisein MOSFETs.更多还原