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铕掺杂BGO晶体的辐照损伤及余辉

Radiation Damage and Afterglow of Europium Doped Bi4Ge3O12(BGO) Crystal

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【作者】 谢幼玉魏宗英殷之文

【Author】 Xie Youyu Wei Zhongying Yin Zhiwen (Shanghai Institute of Ceramics,Academia Sinica)

【机构】 中国科学院上海硅酸盐研究所中国科学院上海硅酸盐研究所

【摘要】 采用透射光谱分析、荧光脉冲响应分析及荧光发射光谱等测试手段,研究了一系列不同量铕掺杂 BGO 晶体的辐照损伤及余辉。结果表明,5 ppm Eu2O3(wt)掺杂即可达到最佳的抗辐照损伤能力,而且因为 Eu3+离子浓度低,由它引起的荧光衰减余辉也很小。还讨论了微量铕掺杂能提高 BGO 晶体抗辐照损伤能力和随同产生余辉的机制。

【Abstract】 The radiation damage and afterglow of a series of Eu-doped BGO crystals werestudied by means of optical transmission spectra,fluorescence emission spectra andfluorescence pulse response analyses。Experimental results showed that a doping of5 ppm of Eu2O3(wt)in BGO crystal is enough to achieve the optimum conditionof radiation hardness and only a very small amplitude of afterglow appeared due toits low Eu3+ ion concentration.The mechanism of the improvement of the radiationhardness and the appearance of afterglow by doping small amount of Eu2O3 inBGO crystals were also discussed in the present paper.

【关键词】 辐照损伤余辉荧光衰减BGO 晶体铕掺杂
【Key words】 Radiation damageAfterglowScintillation decay
  • 【文献出处】 无机材料学报 ,Journal of Inorganic Materials , 编辑部邮箱 ,1992年01期
  • 【被引频次】5
  • 【下载频次】82
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