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铕掺杂BGO晶体的辐照损伤及余辉
Radiation Damage and Afterglow of Europium Doped Bi4Ge3O12(BGO) Crystal
【摘要】 采用透射光谱分析、荧光脉冲响应分析及荧光发射光谱等测试手段,研究了一系列不同量铕掺杂 BGO 晶体的辐照损伤及余辉。结果表明,5 ppm Eu2O3(wt)掺杂即可达到最佳的抗辐照损伤能力,而且因为 Eu3+离子浓度低,由它引起的荧光衰减余辉也很小。还讨论了微量铕掺杂能提高 BGO 晶体抗辐照损伤能力和随同产生余辉的机制。
【Abstract】 The radiation damage and afterglow of a series of Eu-doped BGO crystals werestudied by means of optical transmission spectra,fluorescence emission spectra andfluorescence pulse response analyses。Experimental results showed that a doping of5 ppm of Eu2O3(wt)in BGO crystal is enough to achieve the optimum conditionof radiation hardness and only a very small amplitude of afterglow appeared due toits low Eu3+ ion concentration.The mechanism of the improvement of the radiationhardness and the appearance of afterglow by doping small amount of Eu2O3 inBGO crystals were also discussed in the present paper.
- 【文献出处】 无机材料学报 ,Journal of Inorganic Materials , 编辑部邮箱 ,1992年01期
- 【被引频次】5
- 【下载频次】82